| Popis: |
Publisher Summary This chapter discusses critical technologies for the micromachining of silicon. “Micromachining” is a term generally applied to the wide range of three-dimensional (3-D) structures that can be fabricated using techniques originally developed for the microelectronics industry. Principally, micromachining revolves around single-crystal or polycrystalline silicon (Si), although associated materials such as oxides, nitrides, glasses, polymeric materials, and metals are also necessary and used. Other semiconductors such as the III–V compound semiconductors are also the subject of investigations. Various mechanisms for wet-chemical anisotropic etching are discussed in depth in the chapter. This includes several very recent topics, such as innovative electrochemical thinning and porous Si. New data are presented on the chemical formation of micromirrors on Si and GaAs surfaces. The multiple use substrate (MU-STRATE) is discussed in some detail in the chapter as a possible means of reaching into the terabit/cm3 range of logic element density. A method (signal-induced feedback treatment) of analog e-beam testing and actively modifying up to a billion devices in a few minutes is presented as a way to use the MU-STRATE. |
