| Autor: |
Erh-Kun Lai, Robert L. Bruce, Huai-Yu Cheng, Fabio Carta, H.L. Lung, Wanki Kim, Lynne Gignac, Cheng-Wei Cheng, C. W. Yeh, Matthew J. BrightSky, Hiroyuki Miyazoe, Nanbo Gong, Asit Kumar Ray, Kuo I-Ting, Wei-Chih Chien, C. H. Yang, John M. Papalia |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
2019 IEEE 11th International Memory Workshop (IMW). |
| DOI: |
10.1109/imw.2019.8739648 |
| Popis: |
A reliability study for PCM and OTS intermixing was addressed. The buffer layer between PCM and OTS plays a key role in preventing PCM/OTS intermixing after BEOL processing thermal treatment. Besides cycling endurance, performance degradation due to interlayer intermixing was observed. Optimal device operation and an improved buffer layer allowed drastically improved cycling endurance from a few cycles to > 1E9 cycles. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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