Experimental determination of band offsets of NiO-based thin film heterojunctions

Autor:	Mutsumi Sugiyama, Daisuke Kawade, Shigefusa F. Chichibu
Rok vydání:	2014
Předmět:	Materials science Band gap business.industry Non-blocking I/O Inorganic chemistry Wide-bandgap semiconductor General Physics and Astronomy Heterojunction Photovoltaic effect law.invention law Solar cell Band diagram Optoelectronics Electronic band structure business
Zdroj:	Journal of Applied Physics. 116:163108
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.4900737
Popis:	The energy band diagrams of NiO-based solar cell structures that use various n-type oxide semiconductors such as ZnO, Mg0.3Zn0.7O, Zn0.5Sn0.5O, In2O3:Sn (ITO), SnO2, and TiO2 were evaluated by photoelectron yield spectroscopy. The valence band discontinuities were estimated to be 1.6 eV for ZnO/NiO and Mg0.3Zn0.7O/NiO, 1.7 eV for Zn0.5Sn0.5O/NiO and ITO/NiO, and 1.8 eV for SnO2/NiO and TiO2/NiO heterojunctions. By using the valence band discontinuity values and corresponding energy bandgaps of the layers, energy band diagrams were developed. Judging from the band diagram, an appropriate solar cell consisting of p-type NiO and n-type ZnO layers was deposited on ITO, and a slight but noticeable photovoltaic effect was obtained with an open circuit voltage (Voc) of 0.96 V, short circuit current density (Jsc) of 2.2 μA/cm2, and fill factor of 0.44.
Databáze:	OpenAIRE
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