Crystallization of amorphous hydrogenated silicon (a-Si:H) films under irradiation with femtosecond laser pulses
| Autor: | V. P. Belik, R. S. Popov, M. A. Petrov, A. V. Kukin, Oleg S. Vasyutinskii, E. I. Terukov |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
genetic structures Physics and Astronomy (miscellaneous) Silicon Physics::Optics chemistry.chemical_element 02 engineering and technology 01 natural sciences law.invention Optics law Condensed Matter::Superconductivity 0103 physical sciences Physics::Atomic Physics Irradiation Crystallization Thin film 010302 applied physics business.industry 021001 nanoscience & nanotechnology Laser Amorphous solid Wavelength chemistry Femtosecond Optoelectronics sense organs 0210 nano-technology business |
| Zdroj: | Technical Physics Letters. 42:788-791 |
| ISSN: | 1090-6533 1063-7850 |
| DOI: | 10.1134/s1063785016080058 |
| Popis: | Crystallization of thin films of amorphous hydrogenated silicon under the irradiation of femtosecond laser pulses has been studied. It was found that the crystallization has a clearly pronounced threshold nature and depends on the laser emission wavelength. As shown the best results are achieved in crystallization at the laser wavelength range of 740–760 nm. |
| Databáze: | OpenAIRE |
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