Characteristic X-ray Spectrum Analysis of Micro-Sized SiC

Autor: Noriko Miyoshi, Weiji Mao, Nobuya Shinozaki, Hidenori Era, Toshitada Shimozaki
Rok vydání: 2016
Předmět:
Zdroj: Applied Microscopy. 46:27-31
ISSN: 2287-5123
DOI: 10.9729/am.2016.46.1.27
Popis: It is general to use plural analysis methods to elucidate the structure and the composition of micro-sized materials. However, the following problems will arise during the use of these analysis methods: (1) It may be diffi cult to pinpoint the analysis area in some analysis methods, such as the X-ray diffraction (XRD) analysis. (2) Since an electron beam and X-rays are irradiated many times onto the same area, the sample surface gets damage such as carbon contamination. (3) It takes a long time to analyze. Therefore, electron probe micro-analyzer (EPMA) that can be used to elucidate the compound state of the micro-sized material by only once measurement has been discussed here. Generally, the EPMA can not only obtain the information of simple substances or elements, but also know the variation of the spectrum as changing the bonding state (Kinouchi, 2001; The Surface Science Society of Japan, 1998). However, since the spectrum cannot change regularly for each element in different bonding states, data such as peak shift, peak intensity ratio and half-value width must be one by one analyzed. As it is very diffi cult to prove the change of the characteristic X-ray spectrum theoretically from the viewpoint of the instrumental analysis according to many previous studies, a number of the analysis techniques of the characteristic X-ray have been established based on the experimental data (Abe et al., 2001; Honma et al., 1974; Murakami et al., 1991; Nishimura, 2007; Ohtsuka, 1982; Soejima, 1987; Uchikawa & Numata, 1973; Watanabe et al., 1970). In this study, EPMA that is suitable for micro area analysis was used and we tried to distinguish the kind of compound of the Si series material. At the same time, it was also discussed
Databáze: OpenAIRE