Optical and electrophysical properties of ITO/Si and ITO/ns-Si heterostructures
| Autor: | V.V. Buchenko, V.N. Telega, A.E. Lushkin, N.S. Goloborodko |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Silicon Absorption spectroscopy business.industry chemistry.chemical_element Heterojunction 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology 01 natural sciences Indium tin oxide Substrate type chemistry 0103 physical sciences Optoelectronics 0210 nano-technology business |
| Zdroj: | 2016 IEEE 7th International Conference on Advanced Optoelectronics and Lasers (CAOL). |
| DOI: | 10.1109/caol.2016.7851355 |
| Popis: | The optical and electrical properties of 95%In 2 O 3 +5%SnO 2 /ns-Si and 95%In 2 O 3 +5%SnO 2 /Si heterostructures with films thickness of 6 and 12 nm were investigated. It was shown that texturing of the substrate increases the light absorption of heterostructure with ITO film with thickness of 6 nm. Besides, the current-voltage characteristic of this structure is significantly increasing. At the same time, current-voltage characteristic of the heterostructure with ITO film with thickness 12 nm is quantitatively irrespective of the substrate type. |
| Databáze: | OpenAIRE |
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