MBE growth of ZnS and ZnCdS layers on GaP

Autor:	B. C. Cavenett, Kevin Alan Prior, S. A. Telfer, Andrea Balocchi, C B O'Donnell, Bernhard Urbaszek, Christian Morhain, P. Tomasini
Rok vydání:	2000
Předmět:	Photoluminescence business.industry Chemistry Alloy Substrate surface Flux engineering.material Condensed Matter Physics Spectral line Inorganic Chemistry Full width at half maximum Optics Materials Chemistry engineering Optoelectronics business Surface oxide Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. :197-201
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(00)00080-4
Popis:	The growth of ZnS and ZnCdS alloy layers on GaP substrates have been carried out using molecular beam epitaxy with ZnS and S sources. A Zn flux is used to protect the substrate surface during the surface oxide removal and growth can be started with a 2×4 reconstruction in analogy with the growth of high-quality ZnSe. Lattice-matched ZnCdS layers show only intense excitonic spectra and an X-ray FWHM of 40 arcsec has been observed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::677f473c698e74184a46327a8c5c0825 https://doi.org/10.1016/s0022-0248(00)00080-4 Zobrazit plný text záznamu Full Text from ScienceDirect