Dry etch chemistries for TiO2 thin films
| Autor: | Byoung-Seong Jeong, V. Shishodia, K.H. Baik, J.H. Shin, David P. Norton, P.Y. Park, S. Norasetthekul, K. P. Lee, Eric Lambers, Steve Pearton |
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| Rok vydání: | 2001 |
| Předmět: |
Plasma etching
Scanning electron microscope technology industry and agriculture Analytical chemistry General Physics and Astronomy chemistry.chemical_element macromolecular substances Surfaces and Interfaces General Chemistry Condensed Matter Physics Surfaces Coatings and Films chemistry Etching (microfabrication) Sputtering Fluorine Chlorine Dry etching Thin film |
| Zdroj: | Applied Surface Science. 185:27-33 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/s0169-4332(01)00562-1 |
| Popis: | Several different plasma chemistries were investigated for dry etching of TiO 2 thin films. Fluorine-based discharges produced the fastest etch rates (∼2000 A min −1 ) and selectivities >1 for Si over TiO 2 . Chlorine-based discharges also showed a chemical enhancement over pure Ar sputtering and had selectivities 2 for a range of plasma conditions. Methane–hydrogen discharges produced very slow etch rates, below those obtained with Ar sputtering. The etched surface morphologies of TiO 2 were excellent in all three types of plasma chemistry. Small concentrations (2 at.%) of chlorine- or fluorine-containing residues were identified on the TiO 2 surface after Cl 2 /Ar or SF 6 /Ar etching, but these residues were water soluble. |
| Databáze: | OpenAIRE |
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