Observation of random telegraph signal in SiC Schottky diodes

Autor:	Thierry Ouisse, E. Platel, H. Lahreche, Thierry Billon
Rok vydání:	1997
Předmět:	Materials science business.industry Schottky barrier Electrical engineering Schottky diode Trapping Electron Conductivity chemistry.chemical_compound Depletion region chemistry Discrete time and continuous time Silicon carbide Optoelectronics Electrical and Electronic Engineering business
Zdroj:	Electronics Letters. 33:1907
ISSN:	0013-5194
Popis:	Discrete time switching events are observed when measuring the current of silicon carbide Schottky diodes. RTS noise occurs whenever an excess current is measured. The random telegraph signal (RTS) is shown to originate from localised defective areas, whose conductivity may be modulated by the single trapping/detrapping of an electron in the depletion layer, in the neighbourhood of the localised current path.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::676dcfe7aace17a7ab26be2d7845c740 https://doi.org/10.1049/el:19971302 Zobrazit plný text záznamu