Optical properties of individual GaAs quantum dots embedded into AlGaAs nanowires

Autor:	Lucien Besombes, Alexey V. Platonov, V. P. Kochereshko, A. D. Buravlev, Yu. B. Samsonenko, V. N. Kats, H. Mariette, G. É. Tsyrlin
Rok vydání:	2013
Předmět:	Materials science Semiconductor Photoluminescence Quantum dot business.industry Quantum wire Nanowire Optoelectronics Thin film business Spectral line Surfaces Coatings and Films Magnetic field
Zdroj:	Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 7:622-625
ISSN:	1819-7094 1027-4510
Popis:	The photoluminescence (PL) spectra of semiconductor structures, namely, Al0.3Ga0.7As-based quasi-one-dimensional cylindrical nanowires (nanowhiskers), are measured. The diameter of a typical nanowire is 20–50 nm, and its length was 0.5–1.0 μm. Samples containing one or several GaAs-based quantum dots at the center of the quantum wire are studied. The dot thickness is 2 nm, and the dot diameter is 15–40 nm. Individual nanowhiskers, several nanowhiskers (3–4), and ensembles consisting of many nanowhiskers are studied. The PL spectra are measured for different optical-excitation intensities and in magnetic fields of up to 11 T.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6758c44f0470db8123f06f990d5cad60 https://doi.org/10.1134/s1027451013040149 Zobrazit plný text záznamu Full text from SpringerLink