Effects of annealing on the microstructural evolution of copper films using texture analysis

Autor:	A. Moskvinova, Michael Hietschold, Stefan E. Schulz, Steffen Schulze, Ramona Ecke, I. Schubert
Rok vydání:	2009
Předmět:	Microstructural evolution Materials science chemistry Electrical resistivity and conductivity Annealing (metallurgy) Metallurgy Copper plating chemistry.chemical_element Wafer Metalorganic vapour phase epitaxy Copper Electron backscatter diffraction
Zdroj:	EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany ISBN: 9783540851547
DOI:	10.1007/978-3-540-85156-1_374
Popis:	Successful copper investigation is a key for the newest technologies. Today copper becomes a more and more widespread material in interconnect technology. Its main advantages are a lower resistivity, high conductivity and high purity. Thin copper films were grown by electrodeposition on copper seed layers which were grown by MOCVD and PVD on different barrier layers such as MOCVD titanium-nitride and sputtered tantalum-nitride coated silicon wafers. The bulk copper films were then subjected to i) self-annealing at room temperature, ii) vacuum annealing and iii) N2 annealing at various temperatures periods of time.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::67572ba44ddde2fecb9a3ff6141fce82 https://doi.org/10.1007/978-3-540-85156-1_374 Zobrazit plný text záznamu