Influence of Optical Illumination on the Electric Impedance of Composite Nanostructures Based on p-GaSe Layered Semiconductor with 3D Nanodimensional Inclusions of KNO3 Ferroelectric
| Autor: | A. P. Bakhtinov, V. N. Vodop’yanov, Z. R. Kudrinskii, V. V. Netyaga, Zakhar D. Kovalyuk |
|---|---|
| Rok vydání: | 2014 |
| Předmět: | |
| Zdroj: | Russian Physics Journal. 57:642-656 |
| ISSN: | 1573-9228 1064-8887 |
| DOI: | 10.1007/s11182-014-0287-6 |
| Popis: | Impedance spectra of GaSe composite nanostructures are investigated in the dark and under their light illumination. It is established that the processes of accumulation and transfer of charge carriers in these structures are determined by the strain-induced interaction between 3D nanodimensional pyramidal ferroelectric inclusions and the layered GaSe matrix. Sharp changes in the conductivity and capacitance of the structures are observed in the impedance spectrum at low frequencies. A dependence of the impedance spectra on the constant voltage applied to the structures under their light illumination is associated with the quantumsize effects observed for nanoscale crystal deformations due to the manifestation of the effect of electron flexoelectric coupling on bended nanodimensional regions of its layers through which the vertical transport of charge carriers takes place. Substantial increase in the electric capacitance of the composite nanostructures is established under their illumination. This phenomenon is caused by screening of spontaneous polarization of nanodimensional ferroelectric inclusions by nonequilibrium charge carriers at the interfaces between the inclusions and the GaSe matrix. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|