Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (202¯1) InGaN/GaN heterostructures
| Autor: | Erin C. Young, Steven P. DenBaars, Daniel A. Haeger, Shuji Nakamura, Ingrid Koslow, Po Shan Hsu, James S. Speck, Matthew T. Hardy |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Condensed matter physics Silicon Doping Mineralogy chemistry.chemical_element Cathodoluminescence Heterojunction Slip (materials science) Physics::Geophysics Condensed Matter::Materials Science Reciprocal lattice chemistry Condensed Matter::Superconductivity X-ray crystallography Stress relaxation Condensed Matter::Strongly Correlated Electrons |
| Zdroj: | Applied Physics Letters. 101:132102 |
| ISSN: | 1077-3118 0003-6951 |
| Popis: | Several series of (202¯1) oriented InGaN/GaN heterostructures were grown to examine the impact of Si and Mg doping on stress relaxation by misfit dislocation formation. Si doping greatly reduced m-plane slip misfit dislocation lines as observed in cathodoluminescence, as well as reducing relaxation from c-plane slip as measured using x-ray diffraction reciprocal space maps. However, samples with the same degree of relaxation still showed reduced m-plane slip for the highly Si doped case. Mg doping showed a similar effect while experiments with Si–Mg co-doping reversed the effect. |
| Databáze: | OpenAIRE |
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