Inter-Surface Difussion of Ga on GaAs Non-Planer Substrate and Its Real Time Control by Microprobe
| Autor: | H. Hartmann, E. Schönherr, M. Freiburg |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Surface diffusion
Microprobe Reflection high-energy electron diffraction Chemistry Diffusion Analytical chemistry nutritional and metabolic diseases Mineralogy chemistry.chemical_element General Chemistry Substrate (electronics) Condensed Matter Physics General Materials Science Surface reconstruction Arsenic Molecular beam epitaxy |
| Zdroj: | Crystal Research and Technology. 32:1049-1055 |
| ISSN: | 1521-4079 0232-1300 |
| Popis: | Inter-surface diffusion between (001) and (111)B on the GaAs (001) flat-top ridges (mesas) in GaAs MBE was studied by using a μ-RHEED/SEM MBE system. A mesa with (111)B long sidewalls was prepared employing selective area growth by LPE and with this sample pure two-face inter-surface diffusion was realized. It was found that the direction of pure two-face inter-surface diffusion between the (001) top and the (111)B side surfaces is reversed twice with increasing the arsenic pressure. The directional reversal at lower critical arsenic pressure is explained in terms of the difference in the arsenic pressure dependence of Ga incorporation lifetime on each surface. The change of the reconstruction from (√19 x √19) to (2 x 2) on the (111)B surface is concluded to be responsible for the reversal in the direction of inter-surface diffusion at the higher critical arsenic pressure. By varying the arsenic pressure mesa line-width was controlled in real time, namely at low arsenic pressure the mesa line-width was decreased as the growth proceeded, while it was increased when relatively high arsenic pressure was employed. |
| Databáze: | OpenAIRE |
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