Atomic dynamics and defect evolution during oxygen precipitation and oxidation of silicon

Autor:	M. Ramamoorthy, S. T. Pantelides
Rok vydání:	1999
Předmět:	Materials science Physics and Astronomy (miscellaneous) Silicon Precipitation (chemistry) Dangling bond Nucleation chemistry.chemical_element Microstructure Crystallographic defect Crystallography chemistry Chemical physics Thermal Thin film
Zdroj:	Applied Physics Letters. 75:115-117
ISSN:	1077-3118 0003-6951
Popis:	We report first-principles calculations in terms of which we propose a unified description of the atomic dynamics that underlie the nucleation and growth of SiO2 precipitates in Si and the oxidation of Si thin films. We identify a mechanism for the observed emission of Si interstitials and show that it eliminates electrically active defects without introducing dangling bonds. The results provide an explanation for the low defect density at the Si–SiO2 interface and suggest a novel family of electrically active interface defects that are akin to the “thermal donors” in Si.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::672e2e4fb299ec8fd6dd07cf9a545da4 https://doi.org/10.1063/1.124293 Zobrazit plný text záznamu