Heteroepitaxial silicon-carbide nitride films with different carbon sources on silicon substrates prepared by rapid-thermal chemical-vapor deposition
| Autor: | Yong-Shiuan Tsair, Yean-Kuen Fang, Jyh-Jier Ho, Hsin-Che Chiang, Cheng-Nan Chang, Shyh-Fann Ting, Ming-Chun Hsieh, Wen-Tse Hsieh, Chun-Sheng Lin |
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| Rok vydání: | 2002 |
| Předmět: |
Materials science
Silicon Scanning electron microscope chemistry.chemical_element Mineralogy Nitride Condensed Matter Physics Electronic Optical and Magnetic Materials Carbide Carbon film chemistry Chemical engineering X-ray photoelectron spectroscopy Materials Chemistry Electrical and Electronic Engineering Thin film Carbon |
| Zdroj: | Journal of Electronic Materials. 31:1341-1346 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-002-0119-2 |
| Popis: | Cubic crystalline silicon-carbon nitride (Si1−x−yCxNy) films have been grown successfully using various carbon sources by rapid-thermal chemical-vapor deposition (RTCVD). The characteristics of the Si1−x−yCxNy films grown with SiH3CH3, C2H4, and C3H8 are examined and compared by x-ray photoelectron spectroscopy (XPS) spectra, scanning electron microscopy (SEM) images, and transmission electron microscopy (TEM) patterns. The XPS spectra show that the differences of chemical composition and chemical-bonding state are co-related to the C bonding type of the different carbon source. The SEM images and TEM analysis indicate that the better Si1−x−yCxNy film can be obtained using C3H8 gas as the carbon source. In addition, correlations between the growing stages to the microstructure of the cubic-crystalline Si1−x−yCxNy films have been illustrated in detail. |
| Databáze: | OpenAIRE |
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