Electron microscopy of ultra-thin buried layers in InP and InGaAs
| Autor: | M.R. Aylett, Nikolaus Grigorieff, M.J. Yates, D. Cherns, S.D. Perrin, M. Hockly |
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| Rok vydání: | 1993 |
| Předmět: |
Elastic scattering
Physics and Astronomy (miscellaneous) business.industry Chemistry Metals and Alloys Crystal growth Condensed Matter Physics Epitaxy Dark field microscopy Electronic Optical and Magnetic Materials Optics Electron diffraction Transmission electron microscopy Optoelectronics General Materials Science Thin film business Quantum well |
| Zdroj: | Philosophical Magazine A. 68:121-136 |
| ISSN: | 1460-6992 0141-8610 |
| DOI: | 10.1080/01418619308219361 |
| Popis: | The large-angle convergent-beam electron diffraction (LACBED) technique has been used to measure layer thicknesses and strain of ultra-thin arsenic and phosphorus-rich layers produced by temporary arsine and phosphine purges in the metal-organic vapour phase epitaxy growth of InP and InGaAs. The paper describes how the technique, previously used to investigate single quantum wells of thickness between 8 and 30 A, has been extended to layers of thicknesses of one to two monolayers. It is shown that LACBED patterns can be recorded under conditions in which only a small constant inelastic background and elastic scattering need be considered and can be analysed in detail using a kinematical approach. By combining LACBED results with dark-field images showing the presence of interfacial steps and high-resolution images from cross-sectional samples, a more detailed understanding of the growth interrupt layers is derived. |
| Databáze: | OpenAIRE |
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