Degradation Characteristics of AlGaN/GaN MOS-Heterostructure FETs by Alpha-Particle Irradiation

Autor:	Dongmin Keum, Hyungtak Kim, Geunho Cho
Rok vydání:	2017
Předmět:	010302 applied physics Materials science 010308 nuclear & particles physics business.industry 0103 physical sciences Optoelectronics Alpha particle irradiation Degradation (geology) Heterojunction Algan gan business 01 natural sciences Electronic Optical and Magnetic Materials
Zdroj:	ECS Journal of Solid State Science and Technology. 6:S3030-S3033
ISSN:	2162-8777 2162-8769
DOI:	10.1149/2.0071711jss
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6716ed5508a6a27d63e278a4d0f4c531 https://doi.org/10.1149/2.0071711jss Zobrazit plný text záznamu