NDR Behavior of a Phosphorous-Doped Double-Gate MoS2 Armchair Nanoribbon Field Effect Transistor
| Autor: | K. Sivasankaran, Durgesh Laxman Tiwari |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Length scale Materials science Solid-state physics Dopant business.industry Doping 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Subthreshold slope Electronic Optical and Magnetic Materials Ion 0103 physical sciences Materials Chemistry Optoelectronics Field-effect transistor Electrical and Electronic Engineering 0210 nano-technology business Voltage |
| Zdroj: | Journal of Electronic Materials. 49:551-558 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-019-07806-2 |
| Popis: | This paper presents the negative differential resistance (NDR) behavior of an MoS2 armchair nanoribbon double-gate field effect transistor. The large peak-to-valley current ratio (PVCR) of 2.58 × 102 with a peak current value of − 0.8 μA is achieved with the presented device configuration. A 5-nm channel length device was considered for the study and an extended Huckel model with nonequilibrium Green’s function method is used for the simulation. A phosphorus atom is used as a substitutional dopant at the sulfur site of the MoS2 field effect transistor near the source and drain regions. The PVCR of the device can be controlled by applying a gate voltage. The achieved subthreshold slope of the device is 88 mV/decade with Ion/Ioff value of 1011 at 300 K. The other parameters such as peak current and NDR voltage window are analyzed. The proposed device configuration shows the potentiality of MoS2 armchair nanoribbon material for future small length scale electronic device applications. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink