Simple method for determining Si p-n junction depth using anodization
| Autor: | Androula G. Nassiopoulou, Mario Barozzi, E. Hourdakis, G. Pepponi |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Dopant business.industry Scanning electron microscope Anodizing Doping 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Secondary ion mass spectrometry 0103 physical sciences Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business Porosity p–n junction Sheet resistance |
| Zdroj: | Microelectronic Engineering. :111558 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2021.111558 |
| Popis: | A simple method for the determination of a Si p+/n junction depth is presented. The method is designed to delineate the specific junction due to its importance in the field of Si solar cells where cost effective and fast characterization techniques are necessary. It consists of the electrochemical transformation of the p+ Si to porous Si. The determination of the porous Si depth with the use of cross-sectional Scanning Electron Microscope (SEM) images provides a direct, fast and easy to implement measurement of the junction depth. In addition, through a simple 4-point probe electrical measurement of the sheet resistance, the average dopant concentration is determined, which allows the creation of an abrupt junction approximation of the p+/n junction. The method is shown to produce accurate results in two types of doping techniques, namely implantation and spin-on-doping and a range of junction depths between 200 nm and 1500 nm, as compared to the well-established secondary ion mass spectrometry (SIMS) technique. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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