InAs channel heterostructure‐field effect transistors with InAs/AlSb short‐period superlattice barriers
| Autor: | J. E. Bryce, C. R. Bolognesi, D. H. Chow |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Condensed Matter::Quantum Gases
Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Dopant Silicon Condensed Matter::Other business.industry Superlattice Transistor chemistry.chemical_element Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect law.invention Condensed Matter::Materials Science chemistry law Optoelectronics Field-effect transistor business Quantum well Molecular beam epitaxy |
| Zdroj: | Applied Physics Letters. 69:3531-3533 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.117235 |
| Popis: | We report on the implementation of InAs‐channel heterostructure‐field‐effect transistors (HFETs) fabricated with InAs/AlSb short‐period superlattice barriers. The InAs/AlSb superlattice barrier structure is advantageous for InAs/AlSb HFETs because of its improved chemical stability against oxidation when compared to pure AlSb, and its compatibility with silicon as an n‐type dopant during growth by molecular beam epitaxy. The structures examined here consist of a 200‐A‐wide InAs quantum well inserted between 25/25 A InAs/AlSb superlattice barriers that provide a 0.5 eV conduction band discontinuity between the quantum well and the superlattice barrier. Fabricated HFET devices display complete channel modulation, confirming the field‐effect operation at room temperature. In addition, we demonstrate the modulation doping of an InAs quantum well clad by silicon‐doped InAs/AlSb superlattice barriers. |
| Databáze: | OpenAIRE |
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