Simulation of GaN/AlGaN heterojunction bipolar transistors: part II – pnp structures
| Autor: | D.J King, Stephen J. Pearton, G. T. Dang, J. J. Klaassen, Peter Chow, C Monier, Fan Ren, A. P. Zhang, Andrew M. Wowchak, C. J. Polley, Xian-An Cao, J. M. Van Hove |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Materials science
Heterostructure-emitter bipolar transistor business.industry Heterojunction bipolar transistor Doping Bipolar junction transistor Heterojunction Condensed Matter Physics Electronic Optical and Magnetic Materials Operating temperature Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Layer (electronics) Sheet resistance |
| Zdroj: | Solid-State Electronics. 44:1261-1265 |
| ISSN: | 0038-1101 |
| Popis: | The dc characteristics of pnp GaN/AlGaN heterojunction bipolar transistors are simulated using a quasi-3D-model. The effects of base doping and thickness, contact geometry and device operating temperature on dc current gain have been examined. Maximum gains of ∼50 are expected for high quality materials and an optimized layer design. For similar layer thicknesses, npn devices have higher gains than the pnp structures, but the latter does not suffer from a high base sheet resistance. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect