On Peculiarities of Defect Formation in 6Н-SiC Bulk Single Crystals Grown by PVT Method

Autor:	E. A. Steinman, I. I. Tartakovskii, A. A. Zhokhov, Gennadi A. Emelchenko, Andrey A. Maksimov
Rok vydání:	2013
Předmět:	Crystal symbols.namesake Crystallography Materials science Photoluminescence Mechanics of Materials Scanning electron microscope Mechanical Engineering symbols General Materials Science Condensed Matter Physics Raman scattering
Zdroj:	Materials Science Forum. :43-47
ISSN:	1662-9752
DOI:	10.4028/www.scientific.net/msf.740-742.43
Popis:	The structural defects in the single 6H-SiC crystals grown by the PVT method have been studied by the scanning electron microscopy, Raman scattering and photoluminescence techniques. The formation mechanism of the defects, micropipes and parasitic polytypes 4H and 15R, observed in the single 6H-SiC crystal has been proposed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::66ff0d7d3b0b3ad3fb779ffbfa26442b https://doi.org/10.4028/www.scientific.net/msf.740-742.43 Zobrazit plný text záznamu