| Autor: |
Chung Chan, Yuanzhong Zhou, Imad F. Husein |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
IEEE Conference Record - Abstracts. 1996 IEEE International Conference on Plasma Science. |
| Popis: |
Summary form only given, as follows. The anodic vacuum are was used to deposit thin carbon films (a-C) on Si substrates. The arc produces a partially ionized carbon vapor plasma (less than 20% ionized) and is sustained by a consumable anode. Films with thickness around 0.8-1.7 /spl mu/m were deposited with a deposition rate of 0.5 /spl mu/m/min. The a-C films were modified by nitrogen plasma immersion ion implantation (PIII). The effects of nitrogen implantation on the structure and characteristics of the a-C films were investigated by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and surface energy calculations from the contact angle measurements. XPS C 1s and N 1s spectra suggest a possible formation of covalent carbon-nitrogen bonds. The a-C films Raman spectra have a G band at 1577 cm/sup -1/ and a D band at 1350 cm/sup -l/, while the implanted films show a broad asymmetric peak around 1500 cm/sup -1/. Surface energy analysis indicates that the nitrogen implanted films have lower interfacial tension with the silicon substrate. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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