Evaluation of the Conduction Band Discontinuity of MgSe/ZnCdSe Heterojunctions on InP Substrates Using n–i–n Diodes
| Autor: | Yudai Momose, Ichirou Nomura |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Solid-state physics business.industry Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials 0103 physical sciences Materials Chemistry Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business Current density Conduction band discontinuity Molecular beam epitaxy Voltage Diode |
| Zdroj: | Journal of Electronic Materials. 47:4515-4518 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-018-6389-0 |
| Popis: | Conduction band discontinuity (ΔEc) of MgSe/ZnCdSe heterojunctions were evaluated using n–i–n diodes consisting of an undoped i-MgSe layer sandwiched by n-doped ZnCdSe layers. The n–i–n diodes were fabricated on InP substrates by molecular beam epitaxy. Injection current density versus applied voltage (J–V) characteristics of the n–i–n diodes were measured at 77 K and room temperature. In addition, the theoretical J–V characteristics of the n–i–n diode were calculated while varying ΔEc. By fitting the theoretical data to the experimental data, ΔEc was estimated to be 1.2 eV from the result at 77 K. This value is similar to the ΔEc estimated from the literature. |
| Databáze: | OpenAIRE |
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