High performance silicon solar cells using low dose phosphorus implants

Autor:	Andrew Blakers, Martin A. Green, M. R. Willison
Rok vydání:	1981
Předmět:	Materials science Silicon business.industry Phosphorus Low dose General Engineering chemistry.chemical_element Ion law.invention chemistry law Solar cell Optoelectronics Wafer business Throughput (business) Voltage
Zdroj:	Nuclear Instruments and Methods in Physics Research. 191:51-53
ISSN:	0167-5087
DOI:	10.1016/0029-554x(81)90981-2
Popis:	A new high performance solar cell structure, the MINP solar cell, has been developed, combining the better features of p-n junction and MIS technologies. Voltages in wafers implanted with 20 keV phosphorus ions at dose rates of 10 13 /cm 2 have reached 661 mV (AM), 25°C), the highest reported for an implanted cell. The dose rates required are more than 200 times lower than those required for optimum performance of p-n junction cells and translate to a massive increase in implanter throughput.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::66e18ecd293500032e0a170be36b7878 https://doi.org/10.1016/0029-554x(81)90981-2 Zobrazit plný text záznamu