Influence of dopant species and concentration on grain boundary scattering in degenerately doped In2O3 thin films
| Autor: | Mareike V. Frischbier, Oliver Bierwagen, Mirko Weidner, Andreas Klein, Junjun Jia, Yuzo Shigesato, Hans F. Wardenga |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Electron mobility Materials science Dopant Doping Metals and Alloys Analytical chemistry 02 engineering and technology Surfaces and Interfaces 021001 nanoscience & nanotechnology 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Hall effect 0103 physical sciences Materials Chemistry Grain boundary diffusion coefficient Grain boundary Texture (crystalline) 0210 nano-technology Temperature coefficient |
| Zdroj: | Thin Solid Films. 614:62-68 |
| ISSN: | 0040-6090 |
| Popis: | The influence of dopant species and concentration on the grain boundary scattering of differently doped In 2 O 3 thin films is studied by means of room temperature and temperature dependent Hall effect measurements. Barrier heights at grain boundaries E B are evaluated from temperature dependent carrier mobility taking the theoretically calculated temperature dependence of intragrain mobility into account. It is thereby shown that also samples with a negative temperature coefficient of mobility exhibit significant grain boundary barrier heights and that E B is usually underestimated when evaluated based on Seto's model. It is also shown that the most commonly used Sn doping of In 2 O 3 with a dopant concentration > 2 wt . % SnO 2 leads to significantly enhanced grain boundary scattering compared to nominally undoped, Zr-doped and H-doped films. An effect of grain boundary scattering is even observed for carrier concentrations ~ 10 21 cm − 3 if the films exhibit a pronounced (100) texture. The poor grain boundary properties of highly Sn-doped In 2 O 3 are attributed to segregation of the Sn dopants, which is also indicated by measurements of surface Sn concentration. |
| Databáze: | OpenAIRE |
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