Theoretical study of subband transitions in strain‐induced quantum well wires
| Autor: | Evelyn L. Hu, Jong Chang Yi, Anthony G. Evans, Nadir Dagli, I‐Hsing Tan, Ming Yuan He |
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| Rok vydání: | 1992 |
| Předmět: |
Condensed matter physics
Condensed Matter::Other Chemistry Quantum wire Linear elasticity General Physics and Astronomy Quantum Hall effect Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter::Materials Science symbols.namesake Quantum dot symbols Wave function Hamiltonian (quantum mechanics) Electronic band structure Quantum well |
| Zdroj: | Journal of Applied Physics. 72:546-552 |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | We have modeled the lateral quantum confinement in a GaAs quantum well due to partial strain release on the side walls of an InGaAs stressor located on the top of the well. We used the finite element method to solve both the continuum elasticity equation and the Luttinger four‐band Hamiltonian with strain. This model was used to systematically study the wire width dependence of lateral band edge modulation, subband splitting, and relative transition strength in the strain‐induced quantum well wire structures. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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