The effects of the post-annealing temperatures of TiO2 buffer layers on ferroelectric properties in PLZT thin films

Autor:	Ji-Eon Yoon, Young-Guk Son
Rok vydání:	2009
Předmět:	Post annealing Materials science Electrode General Physics and Astronomy General Materials Science Sputter deposition Thin film Composite material Ferroelectricity Buffer (optical fiber)
Zdroj:	Current Applied Physics. 9:S245-S248
ISSN:	1567-1739
DOI:	10.1016/j.cap.2009.01.026
Popis:	(Pb 0.92 La 0.08 )(Zr 0.65 Ti 0.35 )O 3 (PLZT) thin films with TiO 2 buffer layers were deposited on Pt/Ti/SiO 2 /Si substrates by R.F. magnetron sputtering method in order to improve the ferroelectric characteristics of the films; and the ferroelectric properties and crystallinities of the PLZT thin films were investigated in terms of the effects of the post-annealing temperatures of TiO 2 buffer layers between a Pt bottom electrode and a PLZT thin film. The ferroelectric properties of the PLZT thin films improved as the post-annealing temperatures of TiO 2 layers increased, reaching their maximum at 600 °C and decreasing thereafter.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::66daad311cc95a23b4c2ae09790c4f66 https://doi.org/10.1016/j.cap.2009.01.026 Zobrazit plný text záznamu Full Text from ScienceDirect