Autor: |
Thomas Heinis, Kurt Börlin, Martin Jungen |
Rok vydání: |
1986 |
Předmět: |
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Zdroj: |
Chemical Physics. 103:93-100 |
ISSN: |
0301-0104 |
Popis: |
The photoionization cross sections for the fragments of SiH 4 have been recorded between 11 and 20 eV. From the observed appearance energies we obtain Δ H 0 f (SiH + 2 ) ⩽ 1100 ± 5 kJ/mol, Δ H 0 f (SiH + 3 ⩽ 984 ± 5 kJ/mol and D 0 0 (H 2 Si + −H) = 3.46 eV. No SiH + 4 could be observed. Autoionization structure due to excited states of SiH 4 has been detected between 14 and 18 eV in all fragmentation channels. We have carried out ab initio calculations in order to clarify the nature of these states. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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