Compact ESD Protection Design for CMOS Low-Noise Amplifier
Autor: | Guo-Lun Huang, Meng-Ting Lin, Chun-Yu Lin |
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Rok vydání: | 2020 |
Předmět: |
010302 applied physics
Hardware_MEMORYSTRUCTURES Materials science Electrostatic discharge business.industry Amplifier Electrical engineering Hardware_PERFORMANCEANDRELIABILITY Noise figure 01 natural sciences Electronic Optical and Magnetic Materials CMOS Parasitic capacitance K band 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Radio frequency Electrical and Electronic Engineering business Hardware_LOGICDESIGN Diode |
Zdroj: | IEEE Transactions on Electron Devices. 67:33-39 |
ISSN: | 1557-9646 0018-9383 |
Popis: | A low-noise amplifier (LNA) is the input part of a radio frequency (RF) transceiver, which is vulnerable to electrostatic discharge (ESD). When ESD events occur, they may change the original characteristics of the LNA, such as gain decrease and noise figure (NF) increase. Dual diodes (DD) with MOS-based power clamp is a traditional on-chip ESD protection circuit, but it has disadvantages of large parasitic capacitance, large turn-on resistance, large layout area, and large leakage current. Therefore, a new compact ESD protection circuit is proposed, which uses stacked diodes with embedded silicon-controlled rectifier (SDeSCR) and SCR-based power clamp to protect the LNA. The proposed design has advantages of low parasitic capacitance, low clamping voltage, high ESD robustness, and compact layout area. In this work, the ESD protection circuit and the ${K}$ -band LNA are fabricated in CMOS technology, and their RF characteristics and ESD robustness are verified. |
Databáze: | OpenAIRE |
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