Early Degradation of GaN-based Power LED under Electrical Stresses

Autor:	吴国庆 Wu Guo-qing, 郭伟玲 Guo Wei-ling, 闫薇薇 Yan Weiwei, 崔碧峰 Cui Bifeng, 崔德胜 Cui Desheng, 丁艳 Ding Yan
Rok vydání:	2012
Předmět:	Radiation Materials science business.industry Green-light Condensed Matter Physics Electronic Optical and Magnetic Materials Power (physics) law.invention Luminous flux law Green led Optoelectronics Degradation (geology) Tunneling current business Diode Light-emitting diode
Zdroj:	Chinese Journal of Luminescence. 33:93-96
ISSN:	1000-7032
DOI:	10.3788/fgxb20123301.0093
Popis:	InGaN/GaN-based blue and green light emitting diodes(LEDs) were under an aging with DC current of 900 mA at room temperature.The tunneling current was minimum after 24 h and 6 h for blue and green LED due to the thermal annealing effect which reduced defects.At the same time,the leakage current was minimum and light output was maximum.Then the leakage current increased and luminous flux reduced for green LED.The thermal annealing effect and defect generation were proposed as positive and negative accelerating factor,respectively.The negative accelerating factor of green LED increased quicker than that of blue LED and green LED decreased seriously.The results of analysis have a certain reference value for the improve of GaN LED.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::66b2d0a4e1a2b6558ab03274f54ac204 https://doi.org/10.3788/fgxb20123301.0093 Zobrazit plný text záznamu