Emission dynamics and optical gain of 1.3-μm (GaIn)(NAs)/GaAs lasers
| Autor: | Jerry V. Moloney, A. Wagner, W. W. Rühle, Eoin P. O'Reilly, S. W. Koch, Martin R. Hofmann, Jörg Hader, W.W. Chow, B. Borchert, Wolfgang Stolz, Henning Riechert, J. Koch, Hans Christian Schneider, Nils C. Gerhardt, C. Ellmers, A.Y. Egorov, F. Höhnsdorf |
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| Rok vydání: | 2002 |
| Předmět: |
Photoluminescence
Materials science business.industry Far-infrared laser Physics::Optics Condensed Matter Physics Laser Atomic and Molecular Physics and Optics Photon upconversion law.invention Semiconductor laser theory Condensed Matter::Materials Science law Picosecond Femtosecond Optoelectronics Electrical and Electronic Engineering business Ultrashort pulse |
| Zdroj: | IEEE Journal of Quantum Electronics. 38:213-221 |
| ISSN: | 0018-9197 |
| Popis: | The ultrafast emission dynamics of a 1.3-/spl mu/m (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser is studied by femtosecond luminescence upconversion. We obtain a minimum peak delay of 15.5 ps and a minimum pulse width of 10.5 ps. Laser operation with picosecond emission dynamics is demonstrated over a temperature range from 30 to 388 K. The bandgap shift with temperature of (GaIn)(NAs)/GaAs is determined to be about -2.9/spl middot/10/sup -4/ eV/K, which is smaller than for GaAs. Our measurements of the optical gain provide gain spectra similar to those of commercial (GaIn)(PAs)/InP-structures at moderate densities but broaden considerably for elevated carrier densities due to the stronger carrier confinement. We compare our experimental results with gain spectra calculated from a microscopic model and confirm the predictive capability of the model. The theoretical gain spectra are used as the input for a calculation of the temperature dependence of the (GaIn)(NAs)/GaAs surface-emitter emission which results in very good agreement with experiment. |
| Databáze: | OpenAIRE |
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