Topography and Dislocations in (112)B HgCdTe/CdTe/Si
| Autor: | G. Brill, U. Lee, R. N. Jacobs, L. A. Almeida, Yuanping Chen, M. Jaime-Vasquez, M. Groenert, J. D. Benson, Priyalal Wijewarnasuriya, P. J. Smith, L. O. Bubulac, J. K. Markunas, Andrew J. Stoltz |
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| Rok vydání: | 2009 |
| Předmět: |
Silicon
business.industry Scanning electron microscope fungi technology industry and agriculture chemistry.chemical_element macromolecular substances Surface finish Condensed Matter Physics Cadmium telluride photovoltaics Electronic Optical and Magnetic Materials Crystallography stomatognathic system chemistry Etch pit density Differential interference contrast microscopy Materials Chemistry Surface roughness Optoelectronics Electrical and Electronic Engineering Dislocation business |
| Zdroj: | Journal of Electronic Materials. 38:1771-1775 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-009-0758-7 |
| Popis: | Scanning electron microscopy (SEM), atomic force microscopy (AFM), and x-ray diffraction (XRD) measurements all indicate an approximate factor of ten increase in the Everson etch pit density (EPD) over standard Nomarski microscopy Everson EPD determination. A new (112)B CdTe/Si EPD etch has also been demonstrated which reduces the surface roughness of the etched epilayer and makes etch pit density determination less problematic. |
| Databáze: | OpenAIRE |
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