Evolution of Electron Transport under Resistive Switching in Porphyrazine Films

Autor:	V. A. Vasilik, Anton D. Kosov, Dmitriy R. Khokhlov, Ludmila I. Ryabova, I. V. Krylov, Tatiana V. Dubinina, K. A. Drozdov
Rok vydání:	2021
Předmět:	010302 applied physics Materials science Condensed matter physics Dielectric matrix 02 engineering and technology Porphyrazine 021001 nanoscience & nanotechnology Condensed Matter Physics Thermal conduction 01 natural sciences Electron transport chain Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Resistive switching 0103 physical sciences Charge carrier 0210 nano-technology
Zdroj:	Semiconductors. 55:296-300
ISSN:	1090-6479 1063-7826
Popis:	An analysis of the I–V characteristics makes it possible to determine the mechanisms of conduction corresponding to different states of the flow channels upon resistive switching in porphyrazine films. A variation in the temperature, the structure of the dielectric matrix, and the type of majority charge carriers makes it possible to estimate the applicability of the model of conducting filaments for describing transport and determining the mechanisms of conduction for each state of the system.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::669f664023c73dc994ec6b5e22e8b08d https://doi.org/10.1134/s1063782621030052 Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
Nepřihlášeným uživatelům se plný text nezobrazuje	K zobrazení výsledku je třeba se přihlásit.