Highly reliable oxide-semiconductor TFT for AMOLED displays
| Autor: | Eri Fukumoto, Narihiro Morosawa, Kazuhiko Tokunaga, Takashige Fujimori, Tatsuya Sasaoka, Toshiaki Arai, Yasuhiro Terai |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
Passivation business.industry Oxide thin-film transistor Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Stress (mechanics) AMOLED Etching (microfabrication) Thin-film transistor OLED Optoelectronics Thermal stability Electrical and Electronic Engineering business |
| Zdroj: | Journal of the Society for Information Display. 19:205 |
| ISSN: | 1071-0922 |
| DOI: | 10.1889/jsid19.2.205 |
| Popis: | — The stability and reliability of oxide-semiconductor TFTs were investigated. The contact material to the oxide semiconductor affected the thermal stability of the TFT, and a molybdenum-contact source/drain showed good stability. And the passivating film and TFT structure affected the stability against bias stress and humidity stress, and dc-sputtered Al2O3 passivation and fully covered channel structure with an etching stopper or source/drain showed good reliability. Moreover, high photo-stability was confirmed by the bias-enhanced photo-irradiation stress test. An 11.7-in.-diagonal qHD AMOLED display was demonstrated to provide an applicable solution for a large-sized OLED and an ultra-high-definition LCD-TV mass production. |
| Databáze: | OpenAIRE |
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