Sn vacancy engineering for enhancing the thermoelectric performance of two-dimensional SnS
| Autor: | Xu Lu, Xiao Yang Wang, Lei Miao, Xiaodong Han, Dan Dan Xie, Yong Jin Chen, Bin Zhang, Hong Wu, Heng Quan Yang, Xiao Yuan Zhou |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Condensed matter physics Band gap business.industry Anharmonicity 02 engineering and technology General Chemistry 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Crystallographic defect 0104 chemical sciences Semiconductor Vacancy defect Lattice (order) Thermoelectric effect Materials Chemistry Crystallite 0210 nano-technology business |
| Zdroj: | Journal of Materials Chemistry C. 7:3351-3359 |
| ISSN: | 2050-7534 2050-7526 |
| DOI: | 10.1039/c8tc05711g |
| Popis: | The carrier type and concentration of a semiconductor are intimately associated with the kind and density of point defects possessed within itself. And two-dimensional SnS intrinsically exhibits a p-type semiconductor behavior, which is correlated with Sn vacancies. Here, we present tuning the hole concentration of SnS in a wide range of 1016–1019 cm−3 through a cationic lattice site vacancy engineering strategy, by simply changing the molar ratio of raw materials, i.e., SnCl2versus Na2S·9H2O. The thermoelectric properties of these Sn vacancy engineered SnS samples were investigated. Combining the significantly improved power factor due to the increased hole concentration with an intrinsically low lattice thermal conductivity arising from lattice anharmonicity, a respectable zT value up to 0.8 at 873 K could be achieved in polycrystalline SnS. This work demonstrates that low-cost and easily fabricated SnS is a promising candidate for thermoelectric application, despite it usually being considered as a low-asymmetrical crystal with a relatively large band gap (∼1.1 eV). |
| Databáze: | OpenAIRE |
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