High-pressure study of deep emission band at GaAs/partially ordered GaInP interface
| Autor: | Toshiyuki Ito, Toshihiko Kobayashi, Takashi Ohmae, Kazuo Uchida, Jun'ichiro Nakahara |
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| Rok vydání: | 2000 |
| Předmět: |
Photoluminescence
Condensed matter physics Chemistry Biophysics Astrophysics::Cosmology and Extragalactic Astrophysics General Chemistry Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Biochemistry Atomic and Molecular Physics and Optics Spectral line Blueshift Condensed Matter::Materials Science Microsecond Spontaneous emission Quantum well Excitation |
| Zdroj: | Journal of Luminescence. :408-410 |
| ISSN: | 0022-2313 |
| DOI: | 10.1016/s0022-2313(99)00427-5 |
| Popis: | We have measured the photoluminescence (PL) spectra of GaAs/GaInP single quantum wells at pressures up to ∼5 GPa, and investigated the characteristics of the 1.46 eV deep emission band. It has a very long decay time of 200–400 ns. In addition, unlike the emission from the GaAs well, a strong blueshift of the spectral position with excitation intensity is observed. With increasing pressure, the deep emission shows a sublinear shift towards higher energy, while the GaAs well exhibits a linear shift. The pressure-dependent PL behavior at lower excitation intensity is rather similar to those observed for partially ordered GaInP alloys. These results suggest that the presence of ordered GaInP layers plays an important role in the radiative recombination at 1.46 eV, and the 1.46 eV deep emission is related to the interface transitions of electrons and holes localized at the heterointerface. |
| Databáze: | OpenAIRE |
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