Annealing Effect on Mechanical Stress in Reactive Ion-Beam Sputter-Deposited Silicon Nitride Films

Autor:	Alain Fourrier, G. Gautherin, Daniel Bouchier, Alain Bosseboeuf
Rok vydání:	1991
Předmět:	Materials science Ion beam Annealing (metallurgy) General Engineering General Physics and Astronomy Mineralogy Molar absorptivity Stress (mechanics) chemistry.chemical_compound Silicon nitride chemistry Sputtering Ellipsometry LOCOS Composite material
Zdroj:	Japanese Journal of Applied Physics. 30:1469
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.30.1469
Popis:	Optical properties and mechanical stress of silicon nitride films deposited at room temperature by ion-beam sputtering are studied for various compositions in the range of N/Si=0.6 to N/Si=1.4. The refractive index and mechanical stress are investigated before and after annealing by ellipsometry and the Newton ring method. The silicon-rich film extinction coefficient and stress value decrease after annealing. These property variations are explained by a high structural disorder in films deposited at room temperature which is lowered during annealing. The study of a layer deposited at high temperature (600°C) enables us to check the thermal stress effect in the film. A stress evaluation in the film and at the Si3N4-Si interface shows that sputter-deposited silicon nitride is suitable for the local oxidation of silicon.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::66711df9e5a145ead5186a974f736022 https://doi.org/10.1143/jjap.30.1469 Zobrazit plný text záznamu