Effects of Growth Temperature on Indium Incorporation in InAlN Alloys Grown by GSMBE on Si(111)
| Autor: | Mark Holtz, Denis Myasishchev, Sandeep Sohal, Georgiy M. Guryanov, Rakib Uddin, Vladimir Kuryatkov, Sergey A. Nikishin, Vladimir Mansurov, Mahesh Pandikunta |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Analytical chemistry Oxide chemistry.chemical_element Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry.chemical_compound Ammonia chemistry Materials Chemistry Composition (visual arts) Growth rate Electrical and Electronic Engineering Layer (electronics) Indium Molecular beam epitaxy |
| Zdroj: | Journal of Electronic Materials. 41:824-829 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-012-1967-z |
| Popis: | In x Al1−x N alloys with low indium content (0.025 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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