Graphite addition for SiC formation in diamond/SiC/Si composite preparation
| Autor: | Dandan Guan, Xuanhui Qu, Rong-jun Liu, Mao Wu, Xinbo He, Zheng Wei |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Silicon Scanning electron microscope Mechanical Engineering Composite number 0211 other engineering and technologies Metals and Alloys chemistry.chemical_element Diamond 02 engineering and technology engineering.material 021001 nanoscience & nanotechnology Thermal expansion Thermal conductivity chemistry Geochemistry and Petrology Mechanics of Materials Volume fraction Materials Chemistry engineering Graphite Composite material 0210 nano-technology 021102 mining & metallurgy |
| Zdroj: | International Journal of Minerals, Metallurgy, and Materials. 26:1166-1176 |
| ISSN: | 1869-103X 1674-4799 |
| DOI: | 10.1007/s12613-019-1808-7 |
| Popis: | Herein, graphite was used in the Si-vapor reactive infiltration of diamond/SiC/Si composites to produce composites with various SiC contents. X-ray diffraction was used to determine the phases of the composite, whereas scanning electron microscopy was used to confirm the Si–C reaction between the silicon, graphite, and diamond and to observe the SiC morphology. Various SiC contents in the composite were observed with graphite addition. Furthermore, the reaction between silicon and graphite (diamond) produced coarse (fine) SiC particles. The generation of a 10-μm-diameter Si–C area on the surface of the diamond was observed. The thermal conductivity (TC) and coefficient of thermal expansion (CTE) of the composite was investigated, where the TC varied from 317–426 W•m−1•K−1 with the increase of the SiC volume fraction from 38% to 76% and the corresponding CTE increased from 1.7 × 10-6 to 3.7 × 10−6 K−1, respectively. Furthermore, a critical point for the CTE was found to exist at approximately 250°C, where the composite was under a hydrostatic condition. Finally, the bending strength was found to range from 241 to 341 MPa. |
| Databáze: | OpenAIRE |
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