| Autor: |
Guntrade Roll, Lars-Erik Wernersson, Sofia Johannson, Erik Lind, Mikael Egard, Lars Ohlsson |
| Rok vydání: |
2013 |
| Předmět: |
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| Zdroj: |
2013 IEEE International Integrated Reliability Workshop Final Report. |
| Popis: |
A complete reliability study of the high-frequency characteristics for nMOSFETs on InGaAs channel with Al2O3/HfO2 gate dielectric is presented. DC gate voltage stress causes an increase in the transconductance frequency dispersion. Stress induced border traps degrade the maximum DC-transconductance, but do not react at high frequencies. The main degradation characteristics of the high-frequency measurements can be modeled by the threshold voltage related transconductance shift. The maximum of the cut-off frequency is shifted with stress to higher or lower gate biases, but not decreased. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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