| Autor: |
Joshua D. Caldwell, Qing Chun Jon Zhang, Michael J. O'Loughlin, Charles Scozzie, Heather O'Brian, Albert A. Burk, Victor Temple, Craig Capell, Robert E. Stahlbush, Anant K. Agarwal, John W. Palmour, Robert Callanan |
| Rok vydání: |
2010 |
| Předmět: |
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| Zdroj: |
Materials Science Forum. :1017-1020 |
| ISSN: |
1662-9752 |
| DOI: |
10.4028/www.scientific.net/msf.645-648.1017 |
| Popis: |
In this paper, for the first time, we report a large area (1 cm2) SiC GTO with 9 kV blocking voltage fabricated on 100-mm 4H-SiC substrates with much reduced Basal Plane Dislocation (BPD) density. The static and dynamic characteristics are described. A forward drop of 3.7 V at 100 A (100 A/cm2) is measured at 25°C. A slight positive temperature coefficient of the forward drop is present at 300 A/cm2, indicating the possibility of paralleling multiple devices for higher current capability. The device exhibits extremely low leakage currents at high temperatures. The device has shown fast turn-on time of 53.9 nsec, and ~3.5 s of turn-off time, respectively. A stable forward voltage drop after electrical stress for >1000 hours has been achieved. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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