Size dependence of Raman line-shape parameters due to confined phonons in silicon nanowires

Autor:	Rajesh Kumar, Chanchal Rani, Devesh K. Pathak, Km Neeshu, Ashisha Kumar, Manushree Tanwar, Ritika Kaushik, Anjali Chaudhary
Rok vydání:	2020
Předmět:	0209 industrial biotechnology Materials science Silicon Condensed matter physics Phonon Nanowire chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Industrial and Manufacturing Engineering symbols.namesake 020901 industrial engineering & automation chemistry Mechanics of Materials symbols General Materials Science Physics::Atomic Physics Sensitivity (control systems) 0210 nano-technology Raman spectroscopy Silicon nanowires Size dependence Raman scattering
Zdroj:	Advances in Materials and Processing Technologies. 6:669-676
ISSN:	2374-0698 2374-068X
DOI:	10.1080/2374068x.2020.1740876
Popis:	A comparison of experimentally observed Raman scattering data with Raman line shapes, generated theoretically using a phonon confinement model, has been carried out to understand the sensitivity of...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::663ff77e8050258e58ce234216ca49cc https://doi.org/10.1080/2374068x.2020.1740876 Zobrazit plný text záznamu