Study on the effect of Sn concentration on the structural, optical, and electrical properties of (Al0.55In0.45)2O3:Sn films
Autor: | Hua Qin, Zizhan Li, Yangmei Xin, Yunyan Liu, Huiqiang Liu, Zhao Li, Dong Zhang, Junshan Xiu |
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Rok vydání: | 2021 |
Předmět: |
Band gap
Ultra-high vacuum Analytical chemistry chemistry.chemical_element 02 engineering and technology General Chemistry Crystal structure 010402 general chemistry 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Catalysis 0104 chemical sciences Amorphous solid chemistry Electrical resistivity and conductivity Materials Chemistry Metalorganic vapour phase epitaxy 0210 nano-technology Tin |
Zdroj: | New Journal of Chemistry. 45:4318-4325 |
ISSN: | 1369-9261 1144-0546 |
Popis: | (Al0.55In0.45)2O3:Sn films were prepared on MgO (110) single crystalline substrates by the high vacuum metal organic vapor phase epitaxy (MOVPE) method. Structural analyses showed that the (Al0.55In0.45)2O3:Sn film exhibited a variation from an amorphous structure to a crystalline structure with an increase in the tin content. By regulating the tin content, the resistivity of the (Al0.55In0.45)2O3:Sn film could be reduced by up to two orders of magnitude at a tin content of 21%. A resistivity of 1.19 × 10−3 Ω cm was acquired for the film, along with a mobility of 17.5 cm2 V−1 s−1. The average transmittance of the (Al0.55In0.45)2O3:Sn films in the visible region exceeded 82%. Bandgap values in the range of 5.45 to 4.21 eV could be obtained for samples with various tin contents. The variations of extinction coefficients and refractive indexes for the (Al0.55In0.45)2O3:Sn films with the change of light wavelength were studied. |
Databáze: | OpenAIRE |
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