Effect of source gas composition on the synthesis of functionally gradient materials by CVD

Autor:	Jun-Tae Choi, Yootaek Kim, Keun Ho Auh, Jong Koen Choi
Rok vydání:	1996
Předmět:	Materials science Silicon Mechanical Engineering Composite number Analytical chemistry Mineralogy chemistry.chemical_element Chemical vapor deposition Condensed Matter Physics chemistry Mechanics of Materials Deposition (phase transition) General Materials Science Gas composition Graphite Chemical composition Carbon
Zdroj:	Materials Letters. 26:249-257
ISSN:	0167-577X
DOI:	10.1016/0167-577x(95)00228-6
Popis:	SiC C composite layers with various compositions were deposited on graphite substrates by chemical vapor deposition. The effects of the C [C + Si] and H 2 [C + Si] ratios in the source gas on the composition, growth rate, preferred orientation and morphology of the deposited layers were studied. It was revealed that the C [C + Si] as well as H 2 [C + Si] ratios in the input gas affected the carbon content of the deposited film. SiC C functionally gradient materials (FGMs) were prepared on the basis of conditions established by the deposition of the SiC C mixed phase. It turned out that the CH4SiCl4H2, C3H8SiCl4Ar and C3H8SiCl4ArH2 systems were suitable for the deposition of SiC-rich layers, C-rich layers and layers in between, respectively.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6628f38ebb5460618d26d5cb62560930 https://doi.org/10.1016/0167-577x(95)00228-6 Zobrazit plný text záznamu Full Text from ScienceDirect