Second‐order non‐quasi‐static, compact model of field‐effect transistor revealing terminal rectification beyond their cutoff frequency

Autor: Nihal Y. Ibrahim, Salah E.A. Elnahwy, Ahmed B. Ayoub
Rok vydání: 2020
Předmět:
Zdroj: IET Circuits, Devices & Systems. 14:660-666
ISSN: 1751-8598
1751-858X
DOI: 10.1049/iet-cds.2019.0127
Popis: Recent applications in terahertz imaging, spectroscopy, and communications have been driving the need to increase the operation frequency of field-effect transistors (FETs). However, beyond their cutoff, FETs where recently shown to operate as a second-order rectifier. Despite the developments in this field, the physical models for this phenomenon are mostly ideal and limited in their scope. This has limited the design of transistors, due to the lack of enough insight into the contribution of the different elements of a realistic device. This work develops a physics-based spice compact model of the FET capable of extracting the traditional DC and AC outputs, as well as the second-order rectification (SOR) response, that is valid in all regions of transistor operation. This model is used to study the development of the SOR response within the channel and its boundaries. Unlike other models of this device, the authors’ model shows the evidence that the channel of the transistor does not contribute to the rectified output. Instead, the boundary conditions and elements are the source of the SOR response. These results have a high implication on the design of FETs operating beyond their cutoff frequency.
Databáze: OpenAIRE
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