Elevated temperature nitrogen implants in 6H-SiC
| Autor: | James W. Kretchmer, Mario Ghezzo, Mulpuri V. Rao, David S. Simons, G. Kelner, Peter H. Chi, O. W. Holland, John M. Andrews, Jason A. Gardner |
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| Rok vydání: | 1996 |
| Předmět: |
Materials science
Dopant Annealing (metallurgy) Analytical chemistry Condensed Matter Physics Rutherford backscattering spectrometry Electronic Optical and Magnetic Materials Secondary ion mass spectrometry Crystal Ion implantation Materials Chemistry Breakdown voltage Electrical and Electronic Engineering Diode |
| Zdroj: | Journal of Electronic Materials. 25:885-892 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/bf02666654 |
| Popis: | Elevated temperature (700°C) N ion implantations were performed into 6H-SiC in the energy range of 50 keV-4 MeV. By analyzing the as-implanted depth distributions, the range statistics of the N+ in 6H-SiC have been established over this energy range. Annealing at 1500 and 1600°C for 15 min resulted in Rutherford backscattering spectrometry scattering yields at the virgin crystal level, indicating a good recovery of the crystalline quality of the material without any redistribution of the dopant. A maximum electron concentration of 2 × 1019 cm−3, at room temperature, has been measured even for high-dose implants. The p-n junction diodes made by N ion implantation into a p-type substrate have a forward turn-on voltage of 2.2 V, an ideality factor of 1.90, and a reverse breakdown voltage of 125 V with nA range leakage current for -10 V bias at room temperature. By probing many devices on the same substrate we found uniform forward and reverse characteristics across the crystal. |
| Databáze: | OpenAIRE |
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