Investigation of Preexisting and Generated Defects in Nonfilamentary a-Si/TiO2 RRAM and Their Impacts on RTN Amplitude Distribution
| Autor: | Ludovic Goux, Jigang Ma, Weidong Zhang, Eddy Simoen, Zhigang Ji, Brahim Benbakhti, Malgorzata Jurczak, Bogdan Govoreanu, Gouri Sankar Kar, Robin Degraeve, Chai Zheng, Jian Fu Zhang, Attilio Belmonte |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Instability Electronic Optical and Magnetic Materials Resistive random-access memory Stress (mechanics) Amplitude Modulation Percolation 0103 physical sciences Electrode Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business Degradation (telecommunications) |
| Zdroj: | IEEE Transactions on Electron Devices. 65:970-977 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2018.2792221 |
| Popis: | An extensive investigation of the preexisting and generated defects in amorphous-Si/TiO2-based nonfilamentary a-vacancy modulated conductive oxide RRAM devices has been carried out in this paper to identify the switching and degradation mechanisms, through a combination of random-telegraph-noise (RTN) and constant-voltage-stress analysis. The amplitude of RTN, which leads to read instability, is also evaluated statistically at different stages of cell degradation and correlated with different defects, for the first time. It is found that the switching between low and high resistance states are correlated with the profile modulation of preexisting defects in the “defect-less” region near the a-Si/TiO2 interface. The RTN amplitude observed at this stage is small and has a tight distribution. At longer stress times, a percolation path is formed due to defects generation, which introduces larger RTN amplitude and a significant tail in its distribution. |
| Databáze: | OpenAIRE |
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