MBIR for in-line doping metrology of epitaxial SiGe:B and SiC:P layers

Autor:	Romain Duru, Jonny Hoglund, Delphine Le-Cunff, T. Nguyen, Y. Campidelli, Nicolas Laurent, D. Barge
Rok vydání:	2013
Předmět:	Materials science Silicon business.industry Doping Wide-bandgap semiconductor chemistry.chemical_element Silicon on insulator Epitaxy chemistry Electronic engineering Optoelectronics Wafer business Boron Reflectometry
Zdroj:	ASMC 2013 SEMI Advanced Semiconductor Manufacturing Conference.
DOI:	10.1109/asmc.2013.6552811
Popis:	This paper describes a study performed to evaluate in a manufacturing environment the Model Based Infrared Reflectometry (MBIR) technique for the monitoring of the Boron doping in epitaxial SiGe:B layers and Phosphorus doping in epitaxial SiC:P layers. MBIR correlation to comparative techniques is demonstrated on multiple wafer sets, including product wafers on bulk silicon and FD-SOI (Fully Depleted Silicon On Insulator) substrates. The results obtained demonstrate that MBIR is a suitable measurement technique for the in-line monitoring of doping for epitaxial SiGe:B and SiC:P layers.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6608797c8276aa52330045ba13cd9e93 https://doi.org/10.1109/asmc.2013.6552811 Zobrazit plný text záznamu